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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D379
BLF2022-90 UHF power LDMOS transistor
Product specification Supersedes data of 2002 Sep 09 2003 Feb 24
Philips Semiconductors
Product specification
UHF power LDMOS transistor
FEATURES * Typical W-CDMA performance at a supply voltage of 28 V and IDQ of 750 mA: - Output power = 11.5 W (AV) - Gain = 12.5 dB - Efficiency = 20% - ACPR = -42 dBc at 3.84 MHz - dim = -36 dBc * Easy power control * Excellent ruggedness * High power gain * Excellent thermal stability * Designed for broadband operation (2000 to 2200 MHz) * Internally matched for ease of use.
Top view 2
handbook, halfpage
BLF2022-90
PINNING - SOT502A PIN 1 2 3 drain gate source, connected to flange DESCRIPTION
1
3
MBK394
APPLICATIONS * RF power amplifiers for W-CDMA base stations and multicarrier applications in the 2000 to 2200 MHz frequency range. DESCRIPTION 90 W LDMOS power transistor for base station applications at frequencies from 2000 to 2200 MHz. QUICK REFERENCE DATA Typical RF performance at Th = 25 C in a common source class-AB test circuit. MODE OF OPERATION 2-tone, class-AB W-CDMA, 3GPP test model 1, 64 channels with 66% clipping f (MHz) f1 = 2170; f2 = 2170.1 2140 VDS (V) 28 28 IDQ (mA) 750 750 PL (W) 90 (PEP) 15 (AV) Gp (dB) 12.8 13.2 D (%) 35.7 20 dim (dBc) -28.5 - ACLR5 (dBc) - -40
Fig.1 Simplified outline.
CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2003 Feb 24
2
Philips Semiconductors
Product specification
UHF power LDMOS transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VDS VGS ID Tstg Tj drain-source voltage gate-source voltage DC drain current storage temperature junction temperature PARAMETER - - - -65 - MIN.
BLF2022-90
MAX. 65 15 12 +150 200 V V A
UNIT
C C
THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth c-h Notes 1. Thermal resistance is determined under specified RF operating conditions. 2. Depending on mounting conditions. CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)DSS VGSth IDSS IDSX IGSS gfs RDSon Crs PARAMETER drain-source breakdown voltage gate-source threshold voltage drain-source leakage current on-state drain current gate leakage current forward transconductance drain-source on-state resistance feedback capacitance CONDITIONS VGS = 0; ID = 2.1 mA VDS = 10 V; ID = 210 mA VGS = 0; VDS = 26 V VGS = VGSth + 9 V; VDS = 10 V VGS = 15 V; VDS = 0 VDS = 10 V; ID = 7.5 A VGS = VGSth + 9 V; ID = 7.5 A VGS = 0; VDS = 26 V; f = 1 MHz MIN. 65 4.4 - 27 - - - - TYP. - - - - - 6.2 0.1 5.1 MAX. - 5.5 15 - 38 - - - UNIT V V A A nA S pF PARAMETER thermal resistance from junction to case thermal resistance from case to heatsink CONDITIONS Th = 25 C; note 1 Th = 25 C; note 2 VALUE 0.65 0.2 UNIT K/W K/W
APPLICATION INFORMATION RF performance in a common source class-AB circuit. Th = 25 C; Rth j-c = 0.65 K/W; unless otherwise specified. MODE OF OPERATION 2-tone, class-AB f (MHz) f1 = 2170; f2 = 2170.1 VDS (V) 28 IDQ (mA) 750 PL (W) 90 (PEP) Gp (dB) >11 D (%) >30 dim (dBc) -25
Ruggedness in class-AB operation The BLF2022-90 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDQ = 750 mA; PL = 90 W (CW); f = 2170 MHz.
2003 Feb 24
3
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2022-90
handbook, halfpage
15 Gp
MLD837
50 D (%) 40
handbook, halfpage
0
MLD838
(dB) 14
D
dim (dBc) -20 d3
13
Gp
30 -40 d5 d7 20 -60
12
11
10
10 0 40 80
0 120 PL (PEP) (W)
-80
0
40
80
120 PL (PEP) (W)
VDS = 28 V; IDQ = 750 mA; Th = 25 C; f1 = 2170 MHz; f2 = 2170.1 MHz.
VDS = 28 V; IDQ = 750 mA; Th = 25 C; f1 = 2170 MHz; f2 = 2170.1 MHz.
Fig.2
Power gain and drain efficiency as functions of peak envelope load power; typical values.
Fig.3
Intermodulation distortion as a function of peak envelope load power; typical values.
handbook, halfpage
15 Gp
MLD839
50 D (%) 40
handbook, halfpage
0
MLD840
(dB) 14 Gp
(2) (1)
D
dim (dBc) -20
13
(3)
30
(4)
-40
(5) (6)
(1) (2)
12
20 -60
(3)
11
10
10 0 40 80
0 120 PL (PEP) (W)
-80
0
40
80
120 PL (PEP) (W)
VDS = 28 V; Th = 25 C; f1 = 2170 MHz; f2 = 2170.1 MHz. (1) IDQ = 900 mA. (2) IDQ = 750 mA. (3) IDQ = 600 mA. (4) IDQ = 600 mA. (5) IDQ = 750 mA. (6) IDQ = 900 mA.
VDS = 28 V; Th = 25 C; f1 = 2170 MHz; f2 = 2170.1 MHz. (1) IDQ = 600 mA. (2) IDQ = 900 mA. (3) IDQ = 750 mA.
Fig.4
Power gain and drain efficiency as functions of peak envelope load power; typical values.
Fig.5
Third order intermodulation distortion as a function of peak envelope load power; typical values.
2003 Feb 24
4
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2022-90
handbook, halfpage
15
MLD833
30 Gp D (%)
handbook, halfpage
0
MLD834
Gp (dB) 10
ACLR (dBc) -20
20
-40 ACLR5 5 10 -60 ACLR10 D 0 25 30 35 0 40 45 PL(AV) (dBm) -80 25 30 35 45 40 PL(AV) (dBm)
Single carrier W-CDMA performance. VDS = 28 V; IDQ = 750 mA; Th = 25 C; f = 2140 MHz. Input signal: 3GPP W-CDMA 1-64DPCH with 66% clipping; peak to average power ratio: 8.5 dB at 0.01% probability on CCDF; channel spacing/bandwidth = 5 MHz / 3.84 MHz. Measured in a W-CDMA application circuit.
Single carrier W-CDMA performance. VDS = 28 V; IDQ = 750 mA; Th = 25 C; f = 2140 MHz. Input signal: 3GPP W-CDMA 1-64DPCH with 66% clipping; peak to average power ratio: 8.5 dB at 0.01% probability on CCDF; channel spacing/bandwidth = 5 MHz / 3.84 MHz. Measured in a W-CDMA application circuit.
Fig.7 Fig.6 Power gain and drain efficiency as functions of average load power; typical values.
Adjacent channel leakage ratio (ACLR5 and ACLR10) as function of average load power; typical values.
2003 Feb 24
5
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2022-90
handbook, halfpage
4
MLD835
handbook, halfpage
4
MLD836
Zi () 3 xi
ZL () 2 RL
2
0
1 ri
-2 XL
0 1.8
1.9
2
2.1
2.2 2.3 f (GHz)
-4 1.8
1.9
2
2.1
2.3 2.2 f (GHz)
VDS = 28 V; ID = 750 mA; PL = 90 W; Th = 25 C.
VDS = 28 V; ID = 750 mA; PL = 90 W; Th = 25 C.
Fig.8
Input impedance as a function of frequency (series components); typical values.
Fig.9
Load impedance as a function of frequency (series components); typical values.
handbook, full pagewidth
F1 R1 Vgate C5 C10 C11 C12 C13 C14 R2
VDD
L4 C4 L6 L2 L8 L10 L11
L13 C9
L15 L17 C8 L1 L3 C2 L5 L7 C1 L12 L14 L16 C6 L18 C7
MGS920
input 50
C3 L20
L19
output 50
L9
Fig.10 Class-AB test circuit at f = 2.2 GHz.
2003 Feb 24
6
Philips Semiconductors
Product specification
UHF power LDMOS transistor
List of components (See Figs 10 and 11) COMPONENT C3, C8 C4, C9 C5, C12 C10 C11 C13 C14 F1 L1 L2 L3 L4 L5 L6 L7 L8 L9 L10, L11 L12 L13 L14 L15 L16 L17 L18 L19 L20 R1, R2 Notes 1. American Technical Ceramics type 100B or capacitor of same quality. 2. American Technical Ceramics type 100A or capacitor of same quality. DESCRIPTION VALUE 0.4 to 2.5 pF DIMENSIONS
BLF2022-90
CATALOGUE NO.
C1, C2, C6, C7 Tekelec variable capacitor; type 37281
multilayer ceramic chip capacitor; note 1 12 pF multilayer ceramic chip capacitor; note 2 12 pF electrolytic capacitor multilayer ceramic chip capacitor tantalum SMD capacitor electrolytic capacitor Ferroxcube chip-bead 8DS3/3/8/9-4S2 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 metal film resistor 50 14.5 50 6 50 9.5 50 9.8 24.4 5.1 25.4 5.7 25.4 11.3 50 16.1 50 50 50 10 , 0.6 W 2.9 x 2.4 mm 4 x 11.7 mm 3.7 x 2.4 mm 2 x 30.8 mm 3.6 x 2.4 mm 3 x 18.8 mm 7.8 x 2.4 mm 4 x 18.3 mm 5 x 6.3 mm 7 x 37 mm 10.1 x 6 mm 2.4 x 32.8 mm 7.4 x 6 mm 2.5 x 15.6 mm 10.8 x 2.4 mm 3 x 10.4 mm 2.3 x 2.4 mm 3 x 2.4 mm 5.5 x 2.4 mm 2322 156 11009 10 F; 100 V 100 nF 4.5 F; 50 V 100 F; 63 V 2222 037 58101 4330 030 36301 2222 037 59109 2222 581 16641 multilayer ceramic chip capacitor; note 1 1 nF
3. The striplines are on a double copper-clad printed-circuit board with Teflon dielectric (r = 2.2); thickness 0.79 mm.
2003 Feb 24
7
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2022-90
handbook, full pagewidth
50
50
95
INPUT
OUTPUT
PH990109
VGS VDD
PH990110
C14 C5 R1 C13 C10 C9
R2 F1 C12 C11
C4
C3 C2 C1 C6 C7
C8
INPUT
OUTPUT
PH990109
PH990110
MGU538
Dimensions in mm. The components are situated on one side of the copper-clad printed-circuit board with Teflon dielectric (r = 2.2), thickness 0.79 mm. The other side is unetched and serves as a ground plane.
Fig.11 Component layout for 2.2 GHz class-AB test circuit.
2003 Feb 24
8
Philips Semiconductors
Product specification
UHF power LDMOS transistor
PACKAGE OUTLINE Flanged LDMOST ceramic package; 2 mounting holes; 2 leads
BLF2022-90
SOT502A
D
A
3
D1
F
U1 q C
B c
1
L
H
U2
p w1 M A M B M
E1
E
A
2
b w2 M C M Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 4.72 3.43 0.186 0.135 b 12.83 12.57 c 0.15 0.08 D D1 E 9.50 9.30 E1 9.53 9.25 F 1.14 0.89 H 19.94 18.92 L 5.33 4.32 p 3.38 3.12 Q 1.70 1.45 q 27.94 U1 34.16 33.91 1.345 1.335 U2 9.91 9.65 0.390 0.380 w1 0.25 0.01 w2 0.51 0.02
20.02 19.96 19.61 19.66 0.788 0.786 0.772 0.774
0.505 0.006 0.495 0.003
0.374 0.375 0.366 0.364
0.045 0.785 0.035 0.745
0.210 0.133 0.170 0.123
0.067 1.100 0.057
OUTLINE VERSION SOT502A
REFERENCES IEC JEDEC JEITA
EUROPEAN PROJECTION
ISSUE DATE 99-12-28 03-01-10
2003 Feb 24
9
Philips Semiconductors
Product specification
UHF power LDMOS transistor
DATA SHEET STATUS LEVEL I DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2)(3) Development DEFINITION
BLF2022-90
This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).
II
Preliminary data Qualification
III
Product data
Production
Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2003 Feb 24
10
Philips Semiconductors
Product specification
UHF power LDMOS transistor
NOTES
BLF2022-90
2003 Feb 24
11
Philips Semiconductors - a worldwide company
Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
(c) Koninklijke Philips Electronics N.V. 2003
SCA75
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613524/03/pp12
Date of release: 2003
Feb 24
Document order number:
9397 750 10923

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